ALD114913PAL

N/A

MOSFET 2N-CH 10.6V 8DIP

ALD114913PAL

RoHSRoHS-kompatibel
ALD114913PAL
Fabrikant
N/A
Producentens varenummer
ALD114913PAL
Kategorier
Diskret Semiconductor Products
Underkategorier
Transistorer - FET, MOSFET - Arrays
Serie
EPAD®
del statusActive
FET type2 N-Channel (Dual) Matched Pair
FET FeatureDepletion Mode
Drain til Source spænding (Vdss)10.6V
Strøm - kontinuerlig drain (Id) @ 25 ° C12mA, 3mA
RDS (Max) @ Id, Vgs500 Ohm @ 2.7V
Vgs (th) (Max) @ Id1.26V @ 1µA
Gate Charge (Qg) (Max) @ Vgs-
Indgangskapacitet (Ciss) (Max) @ Vds2.5pF @ 5V
Power - Max500mW
Driftstemperatur0°C ~ 70°C (TJ)
MonteringstypeThrough Hole
Pakke / Case8-DIP (0.300", 7.62mm)
Leverandør Device Pakke8-PDIP
Producentens varenummer Beskrivelse Mængde til rådighed Pris per stk
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Referencepris:
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