ALD212908APAL

N/A

MOSFET 2N-CH 10.6V 0.08A 8DIP

ALD212908APAL

RoHSRoHS-kompatibel
ALD212908APAL
Fabrikant
N/A
Producentens varenummer
ALD212908APAL
Kategorier
Diskret Semiconductor Products
Underkategorier
Transistorer - FET, MOSFET - Arrays
Serie
EPAD®, Zero Threshold™
del statusActive
FET type2 N-Channel (Dual) Matched Pair
FET FeatureLogic Level Gate
Drain til Source spænding (Vdss)10.6V
Strøm - kontinuerlig drain (Id) @ 25 ° C80mA
RDS (Max) @ Id, Vgs-
Vgs (th) (Max) @ Id20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs-
Indgangskapacitet (Ciss) (Max) @ Vds-
Power - Max500mW
Driftstemperatur0°C ~ 70°C (TJ)
MonteringstypeThrough Hole
Pakke / Case8-DIP (0.300", 7.62mm)
Leverandør Device Pakke8-PDIP
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Referencepris:
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